12 single ended ap 15.0 1.0 30.0 3.40 c/w 65 0.8 5.50 1.0 55 0.90 2.50 3.0 50 0.10 70 parameter symbol min typ max units test conditions common source power gain drain efficiency total device dissipation junction to case thermal resistance maximum junction temperature storage temperature dc drain current drain to source voltage gate to source voltage -65 c to 150 c c a v load mismatch tolerance vswr drain to gate voltage relative 0.40 0.10 ids = ma, vgs = 0v v, vgs = 0v ciss crss coss vds = idq = a, vds = v, f = 0.40 bvdss idss drain breakdown voltage v ma pf pf pf common source output capacitance common source feedback capacitance idq = idq = 0.40 1,000 vgs = 20v, ids = rdson saturation resistance forward transconductance gm vds = 10v, vgs = 5v polyfet rf devices 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax: (805) 484-3393 email:sell@polyfet.com url:www.polyfet.com 1,000 1,000 common source input capacitance 70 v igss vgs idsat zero bias drain current gate leakage current gate bias for drain current saturation current 25 ua v mho ohm amp parameter symbol min typ max units test conditions electrical characteristics ( each side ) rf characteristics ( 15.0 absolute maximum ratings ( t = gps 28.0 a, vds = v, f = a, vds = v, f = 28.0 28.0 watts v 1 mhz mhz mhz watts package style 15.0 vds = 0v vgs = 30v vgs = 20v, vds = 10v high efficiency, linear high gain, low noise general description 28.0 vds = a, vgs = vds ids = a db % o o o o o silicon vdmos and ldmos transistors designed specifically for broadband rf applications. suitable for military radios, cellular and paging amplifier base stations, broadcast fm/am, mri, laser driver and others. "polyfet" process features low feedback and output capacitances, resulting in high f transistors with high input impedance and high efficiency. tm t silicon gate enhancement mode rf power transistor ldmos vgs = 0v, f = 1 mhz 28.0 vds = vgs = 0v, f = 1 mhz 28.0 vds = vgs = 0v, f = 1 mhz 28.0 revision 10/01/2007 20 25 c ) watts output ) 200 polyfet rf devices lp801 10:1 rohs compliant
l2b 1 die id & gm vs vg 0.10 1.00 10.00 0 2 4 6 8 10 12 14 16 18 vgs in volts id in amps; gm in mhos id gm l2b 1 dice capacitance 1 10 100 0246810121416182022242628 vds in volts capacitance in pfs coss ciss crss lp801 pout vs pin f=1000 mhz; idq=0.2a;vds=28v 2 4 6 8 10 12 14 16 18 20 22 24 0 0.5 1 1.5 2 2.5 3 pin in watts 8.00 10.00 12.00 14.00 16.00 efficiency = 58% pout gai n polyfet rf devices pout vs pin graph capacitance vs voltage id & gm vs vgs iv curve zin zout package dimensions in inches lp801 l2b 1 die iv 0 1 2 3 4 5 6 0 2 4 6 8 101214161820 vds in volts id in amps vg=2v vg=4v vg=6v vg=8v 0 vg=12v 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax: (805) 484-3393 email:sell@polyfet.com url:www.polyfet.com revision 10/01/2007 tolerance .xx +/-0.01 .xxx +/-.005 inches
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